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HAF2026RJ

更新时间： 2024-09-28 07:02:43

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	143K
描述
Silicon N Channel Power MOSFET Power Switching

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HAF2026RJ 数据手册

HAF2026RJ

Silicon N Channel Power MOS FET

Power Switching

REJ03G1255-0200

Rev.2.00

Jun 02, 2006

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

•

Logic level operation (5 to 6 V Gate drive)

Built-in the over temperature shut-down circuit

High endurance capability against to the shut-down circuit

Latch type shut down operation (need 0 voltage recovery)

Built-in the current limitation circuit

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 (FP-8DAV))

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

Current

Limitation

Circuit

Current

Limitation

Circuit

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

MOS1

MOS2

Rev.2.00 Jun 02, 2006 page 1 of 8

12 3 4 5 6 7...9

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