Datasheet > HAF2025-90STL

HAF2025-90STL

更新时间： 2024-01-23 21:23:54

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	90K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),TO-252AA

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中文翻译

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技术参数
数据手册

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HAF2025-90STL 技术参数

生命周期：	Obsolete	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	15 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	40 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

HAF2025-90STL 数据手册

HAF2025(L), HAF2025(S)

Silicon N Channel Power MOS FET

Power Switching

REJ03G0145-0300Z

Rev.3.00

Apr.22.2004

Descriptions

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in

over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

DPAK-2

DPAK-S

Gate resistor

Temperature

sensing

circuit

Latch

circuit

Gate

shutdown

circuit

1. Gate

2. Drain

3. Source

4. Drain

Rev.3.00, Apr.22.2004, page 1 of 8

12 3 4 5 6 7...9

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