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HAF2021(L) PDF预览

HAF2021(L)

更新时间: 2024-01-14 15:37:48
品牌 Logo 应用领域
瑞萨 - RENESAS 开关脉冲晶体管
页数 文件大小 规格书
9页 87K
描述
50A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-4

HAF2021(L) 技术参数

生命周期:Transferred包装说明:IN-LINE, R-PSIP-T3
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
其他特性:BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HAF2021(L) 数据手册

 浏览型号HAF2021(L)的Datasheet PDF文件第2页浏览型号HAF2021(L)的Datasheet PDF文件第3页浏览型号HAF2021(L)的Datasheet PDF文件第4页浏览型号HAF2021(L)的Datasheet PDF文件第5页浏览型号HAF2021(L)的Datasheet PDF文件第6页浏览型号HAF2021(L)的Datasheet PDF文件第7页 
HAF2021(L), HAF2021(S)  
Silicon N Channel MOS FET Series  
Power Switching  
REJ03G0179-0200Z  
(Previous ADE-208-1459A(Z))  
Rev.2.00  
Mar.05.2004  
Description  
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in  
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of  
high junction temperature like applying over power consumption, over current etc.  
Features  
Logic level operation (6 V Gate drive)  
High endurance capability against to the short circuit  
Built–in the over temperature shut–down circuit  
Latch type shut–down operation (Need 0 voltage recovery)  
Outline  
D
LDPAK  
4
4
1. Gate  
G
Gate resistor  
2. Drain  
3. Source  
4. Drain  
1
Temperature  
Sensing Circuit  
Latch  
Circuit  
Gate  
Shut-down  
Circuit  
2
3
1
2
3
S
Rev.2.00, Mar.05.2004, page 1 of 8  

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