Datasheet > HAF2021L

HAF2021L

更新时间： 2024-02-04 16:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	92K
描述
Silicon N Channel MOSFET Series Power Switching

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

HAF2021L 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.46
其他特性：	BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	50 A	最大漏源导通电阻：	0.015 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	100 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

HAF2021(L), HAF2021(S)

Silicon N Channel MOS FET Series

Power Switching

REJ03G0179-0200Z

(Previous ADE-208-1459A(Z))

Rev.2.00

Mar.05.2004

Description

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in

over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc.

Features

•

Logic level operation (6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

1. Gate

Gate resistor

2. Drain

3. Source

4. Drain

Temperature

Sensing Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Rev.2.00, Mar.05.2004, page 1 of 8

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
HAF2021S	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2025-90S	RENESAS	获取价格	15A, 16V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2025-90STL	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),TO-252AA
HAF2025-90STR	RENESAS	获取价格	15A, 16V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2026RJ	RENESAS	获取价格	Silicon N Channel Power MOSFET Power Switching
HAF2026RJ_10	RENESAS	获取价格	Silicon N Channel Power MOS FET Power Switching
HAF2026RJ-EL-E	RENESAS	获取价格	Silicon N Channel Power MOSFET Power Switching
HAF2027	RENESAS	获取价格	Silicon N Channel Power MOSFET Power Switching
HAF2027-90L-E	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-251VAR
HAF2027-90STL-E	RENESAS	获取价格	Silicon N Channel Power MOSFET Power Switching