Datasheet > HAF2021(S)-(1)

HAF2021(S)-(1)

更新时间： 2024-02-04 08:17:03

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
11页	75K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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HAF2021(S)-(1) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	50 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

HAF2021(S)-(1) 数据手册

HAF2021(L), HAF2021(S)

Silicon N Channel MOS FET Series

Power Switching

ADE-208-1459A (Z)

Rev.1

Jan. 2002

Description

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

•

Logic level operation (6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

Gate resistor

Tempe

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...11

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