是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.34 | Is Samacsys: | N |
其他特性: | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | TIN COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAF2005 | RENESAS |
获取价格 |
Silicon N Channel MOSFET Series Power Switching |
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HAF2005 | HITACHI |
获取价格 |
Silicon N Channel MOS FET Series Power Switching |
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HAF2005-90 | RENESAS |
获取价格 |
40A, 60V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN |
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HAF2006R | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.24ohm, MS-012AA, SOP-8 |
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HAF2007 | RENESAS |
获取价格 |
Silicon N Channel MOSFET Series Power Switching |
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HAF2007 | HITACHI |
获取价格 |
Silicon N Channel MOS FET Series Power Switching |
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HAF2007(L) | RENESAS |
获取价格 |
5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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HAF2007(L)|HAF2007(S) | ETC |
获取价格 |
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HAF2007(S) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal |
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HAF2007(S) | RENESAS |
获取价格 |
5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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