Datasheet > HAF2006R

HAF2006R

更新时间： 2024-09-24 14:50:43

品牌	Logo	应用领域
日立 - HITACHI		光电二极管
页数	文件大小	规格书
7页	28K
描述
Power Field-Effect Transistor, 0.24ohm, MS-012AA, SOP-8

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HAF2006R 数据手册

HAF2006R

Silicon N Channel MOS FET Series

Power Switching

ADE-208-689 (Z)

Target specification 1st. Edition

Nov. 1998

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

SOP–8

Gate resistor

Gate

Tempe–

rature

Sencing

Circuit

Shut–

down

Circuit

Latch

Circuit

MOS1

Gate resistor

1, 3

2, 4

Source

Gate

Tempe–

rature

Sencing

Circuit

Shut–

down

Circuit

Latch

Circuit

5, 6, 7, 8 Drain

MOS2

12 3 4 5 6 7

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