是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-63 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.15 | 其他特性: | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
HAF2007-90STL | RENESAS |
功能相似 |
Silicon N Channel MOSFET Series Power Switching | |
HAF2007-90S | RENESAS |
功能相似 |
Silicon N Channel MOSFET Series Power Switching |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAF2007L | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007L | HITACHI |
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Silicon N Channel MOS FET Series Power Switching | |
HAF2007S | HITACHI |
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Silicon N Channel MOS FET Series Power Switching | |
HAF2007S | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2008 | HITACHI |
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SILICON N CHANNEL MOSFET SERIES POWER SWITCHING | |
HAF2011 | RENESAS |
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Silicon N Channel MOS FET Series Power Switching | |
HAF2011 | HITACHI |
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Silicon N Channel MOS FET Series Power Switching | |
HAF2011(L) | HITACHI |
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Power Field-Effect Transistor, 0.033ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 | |
HAF2011(L)|HAF2011(S) | ETC |
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||
HAF2011(S) | RENESAS |
获取价格 |
0.033ohm, POWER, FET, LDPAK-3 |