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HAF2012

更新时间: 2024-09-25 03:41:15
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
10页 129K
描述
Silicon N Channel MOS FET Series Power Switching

HAF2012 数据手册

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HAF2012(L), HAF2012(S)  
Silicon N Channel MOS FET Series  
Power Switching  
REJ03G1139-0400  
Rev.4.00  
Jul 13, 2007  
Description  
This FET has the over temperature shut-down capability sensing to the junction temperature.  
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down  
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.  
Features  
Logic level operation (4 to 6 V Gate drive)  
High endurance capability against to the short circuit  
Built-in the over temperature shut-down circuit  
Latch type shut-down operation (Need 0 voltage recovery)  
Outline  
RENESAS Package code: PRSS0004AE-A  
RENESAS Package code: PRSS0004AE-B  
(Package name: LDPAK (S)-(1) )  
(Package name: LDPAK (L) )  
4
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
1
2
3
D
G
Gate Resistor  
Tempe-  
rature  
Sensing  
Circuit  
Latch  
Circuit  
Gate  
Shut-  
down  
Circuit  
S
REJ03G1139-0400 Rev.4.00 Jul 13, 2007  
Page 1 of 9  

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