Datasheet > HAF2012(L)|HAF2012(S)

HAF2012(L)|HAF2012(S)

更新时间： 2024-01-27 10:16:34

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HAF2012(L)|HAF2012(S) 数据手册

HAF2012(L),HAF2012(S)

Silicon N Channel MOS FET Series

Power Switching

ADE-208-677A (Z)

2nd. Edition

July 2000

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
HAF2012(S)	RENESAS	获取价格	暂无描述
HAF2012(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
HAF2012(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
HAF2012-90L	RENESAS	获取价格	20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
HAF2012-90S	RENESAS	获取价格	20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3
HAF2012-90STR	RENESAS	获取价格	20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3
HAF2012L	RENESAS	获取价格	Silicon N Channel MOS FET Series Power Switching
HAF2012S	RENESAS	获取价格	Silicon N Channel MOS FET Series Power Switching
HAF2014	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2014-90	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching