生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 20 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAF2012(S)-(2) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
HAF2012-90L | RENESAS |
获取价格 |
20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | |
HAF2012-90S | RENESAS |
获取价格 |
20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | |
HAF2012-90STR | RENESAS |
获取价格 |
20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | |
HAF2012L | RENESAS |
获取价格 |
Silicon N Channel MOS FET Series Power Switching | |
HAF2012S | RENESAS |
获取价格 |
Silicon N Channel MOS FET Series Power Switching | |
HAF2014 | RENESAS |
获取价格 |
Silicon N Channel MOSFET Series Power Switching | |
HAF2014-90 | RENESAS |
获取价格 |
Silicon N Channel MOSFET Series Power Switching | |
HAF2015RJ | RENESAS |
获取价格 |
Silicon N Channel MOSFET Series Power Switching | |
HAF2015RJ | HITACHI |
获取价格 |
SILICON N CHANNEL MOS FET SERIES POWER SWITCHING |