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HAF2007

更新时间: 2024-02-28 00:50:40
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
9页 95K
描述
Silicon N Channel MOSFET Series Power Switching

HAF2007 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.26
其他特性:LOGIC LEVEL COMPATIBLE外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):5 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):10 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HAF2007 数据手册

 浏览型号HAF2007的Datasheet PDF文件第2页浏览型号HAF2007的Datasheet PDF文件第3页浏览型号HAF2007的Datasheet PDF文件第4页浏览型号HAF2007的Datasheet PDF文件第5页浏览型号HAF2007的Datasheet PDF文件第6页浏览型号HAF2007的Datasheet PDF文件第7页 
HAF2007(L), HAF2007(S)  
Silicon N Channel MOS FET Series  
Power Switching  
REJ03G1137-0400  
(Previous: ADE-208-706B)  
Rev.4.00  
Sep 07, 2005  
Description  
This FET has the over temperature shut-down capability sensing to the junction temperature.  
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down  
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.  
Features  
Logic level operation (4 to 6 V Gate drive)  
High endurance capability against to the short circuit  
Built-in the over temperature shut-down circuit  
Latch type shut-down operation (Need 0 voltage recovery)  
Outline  
RENESAS Package code: PRSS0004ZD-B  
RENESAS Package code: PRSS0004ZD-C  
(Package name: DPAK (S) )  
(Package name: DPAK (L)-(2) )  
4
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
1
2
3
2, 4  
D
1
G
Gate resistor  
Tempe-  
rature  
Sensing  
Circuit  
Gate  
Latch  
Circuit  
Shut-  
down  
Circuit  
S
3
Rev.4.00 Sep 07, 2005 page 1 of 8  

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