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HAF2007

更新时间： 2024-09-16 22:33:11

品牌	Logo	应用领域
日立 - HITACHI		开关电源开关
页数	文件大小	规格书
6页	45K
描述
Silicon N Channel MOS FET Series Power Switching

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数据手册

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HAF2007 数据手册

HAF2007(L), HAF2007(S)

Silicon N Channel MOS FET Series

Power Switching

Target specification

ADE-208-706 (Z)

1st. Edition

Dec. 1998

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

DPAK–2

2, 4

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6

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与HAF2007相关器件

型号	品牌	获取价格	描述	数据表
HAF2007(L)	RENESAS	获取价格	5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2007(L)\|HAF2007(S)	ETC	获取价格
HAF2007(S)	HITACHI	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal
HAF2007(S)	RENESAS	获取价格	5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2007(S)-2	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
HAF2007-90L	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007-90S	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007-90STL	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007-90STR	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007L	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching