HAF2005

更新时间： 2024-02-23 12:46:38

品牌	Logo	应用领域
日立 - HITACHI		晶体开关晶体管功率场效应晶体管脉冲电源开关局域网
页数	文件大小	规格书
6页	34K
描述
Silicon N Channel MOS FET Series Power Switching

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HAF2005 技术参数

HAF2005

Silicon N Channel MOS FET Series

Power Switching

ADE-208-688 (Z)

Target specification 1st. Edition

Nov. 1998

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

TO–220FM

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

1. Gate

2. Drain

3. Source

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
HAF2005-90	RENESAS	获取价格	40A, 60V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN
HAF2006R	HITACHI	获取价格	Power Field-Effect Transistor, 0.24ohm, MS-012AA, SOP-8
HAF2007	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007	HITACHI	获取价格	Silicon N Channel MOS FET Series Power Switching
HAF2007(L)	RENESAS	获取价格	5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2007(L)\|HAF2007(S)	ETC	获取价格
HAF2007(S)	HITACHI	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal
HAF2007(S)	RENESAS	获取价格	5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2007(S)-2	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
HAF2007-90L	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching