生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | 其他特性: | HIGH SPEED SWITCHING |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 15 A |
集电极-发射极最大电压: | 500 V | 配置: | SINGLE |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 600 ns |
标称接通时间 (ton): | 400 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT15J101 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT15J102 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT15J103 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT15J103(SM) | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 15A I(C) | TO-252VAR | |
GT15J103SM | TOSHIBA |
获取价格 |
TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, TO-220, TO-220SM, 2 PIN, Insulated Gate BIP Transi | |
GT15J121 | TOSHIBA |
获取价格 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT | |
GT15J-3/2P-V | HRS |
获取价格 |
Board Connector | |
GT15J301 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT15J301_06 | TOSHIBA |
获取价格 |
HIGH POWER SWITCHING APPLICATIONS | |
GT15J311 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |