Datasheet > GT15J331_06

GT15J331_06

更新时间： 2024-11-18 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
7页	222K
描述
Silicon N Channel IGBT High Power Switching Applications

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GT15J331_06 数据手册

GT15J331

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT15J331

High Power Switching Applications

Unit: mm

Motor Control Applications

•

Fourth-generation IGBT

Enhancement mode type

High speed: t = 0.10 μs (typ.)

Low saturation voltage: V

= 1.75 V (typ.)

CE (sat)

FRD included between emitter and collector

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±20

CES

GES

1 ms

Collector current

JEDEC

―

Emitter-collector forward

current

1 ms

JEITA

Collector power dissipation

(Tc = 25°C)

TOSHIBA

Weight: 1.5 g

2-10S1C

Junction temperature

150

°C

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Equivalent Circuit

Marking

Collector

JEDEC

―

15J331

Part No. (or abbreviation code)

Lot No.

Gate

JEITA

Emitter

TOSHIBA

Weight: 1.4 g

2-10S2C

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-10-31

12 3 4 5 6 7

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