是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.85 |
Is Samacsys: | N | 其他特性: | HIGH SPEED |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 15 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE |
最大降落时间(tf): | 500 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 600 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | VCEsat-Max: | 4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT15Q102 | TOSHIBA |
获取价格 |
High Power Switching Applications | |
GT15Q102_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications | |
GT15Q301 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT15Q301_06 | TOSHIBA |
获取价格 |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |
GT15Q311 | TOSHIBA |
获取价格 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT15T-2022SCF | HRS |
获取价格 |
Wire Terminal | |
GT15T-2024SCF | HRS |
获取价格 |
HID Lamp DII Sockets | |
GT15T-2024SCF(A) | HRS |
获取价格 |
Wire Terminal | |
GT15T-2024SCF(A)(70) | HRS |
获取价格 |
Push-On Terminal, ROHS COMPLIANT | |
GT15T-2S | HRS |
获取价格 |
HID Lamp DII Sockets |