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GT15M321_06 PDF预览

GT15M321_06

更新时间: 2024-09-15 03:40:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关高功率电源
页数 文件大小 规格书
6页 426K
描述
HIGH POWER SWITCHING APPLICATIONS

GT15M321_06 数据手册

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GT15M321  
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT  
GT15M321  
HIGH POWER SWITCHING APPLICATIONS  
Unit: mm  
z Fourth-generation IGBT  
z FRD included between emitter and collector  
z Enhancement mode type  
z High speed  
: t = 0.20 μs (TYP.) (I = 15 A)  
f
C
z Low saturation voltage  
: V  
= 1.8V (TYP.)  
CE (sat)  
(I = 15A)  
C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
CollectorEmitter Voltage  
V
V
900  
±25  
15  
V
V
CES  
Gate-Emitter Voltage  
GES  
DC  
I
C
Collector Current  
A
1ms  
DC  
I
30  
CP  
I
15  
F
EmitterCollector Foward  
Current  
A
1ms  
I
120  
FM  
JEDEC  
Collector Power Dissipation  
(Tc = 25°C)  
JEITA  
P
55  
W
C
TOSHIBA  
Weight: 5.8 g (typ.)  
2-16F1A  
Junction Temperature  
T
150  
°C  
°C  
j
Storage Temperature Range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
EQUIVALENT CIRCUIT  
MARKING  
TOSHIBA  
GT15M321  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2006-10-31  

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