Datasheet > GT15M321_06

GT15M321_06

更新时间： 2024-11-18 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高功率电源
页数	文件大小	规格书
6页	426K
描述
HIGH POWER SWITCHING APPLICATIONS

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中文翻译

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数据手册

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GT15M321_06 数据手册

GT15M321

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT15M321

HIGH POWER SWITCHING APPLICATIONS

Unit: mm

z Fourth-generation IGBT

z FRD included between emitter and collector

z Enhancement mode type

z High speed

: t = 0.20 μs (TYP.) (I = 15 A)

z Low saturation voltage

: V

= 1.8V (TYP.)

CE (sat)

(I = 15A)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

900

±25

CES

Gate-Emitter Voltage

GES

Collector Current

1ms

Emitter−Collector Foward

Current

1ms

120

JEDEC

⎯

Collector Power Dissipation

(Tc = 25°C)

JEITA

TOSHIBA

Weight: 5.8 g (typ.)

2-16F1A

Junction Temperature

150

°C

Storage Temperature Range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

TOSHIBA

GT15M321

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-10-31

12 3 4 5 6

中文翻译

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