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GT15J331(2-10S2C) PDF预览

GT15J331(2-10S2C)

更新时间： 2024-09-15 15:33:31
品牌 Logo 应用领域
东芝 - TOSHIBA 栅双极性晶体管功率控制
页数 文件大小 规格书
7页 224K
描述
TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, 2-10S2C, TO-220SM, 3 PIN, Insulated Gate BIP Transistor

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GT15J331(2-10S2C) 技术参数

生命周期：Active零件包装代码：TO-220SM
包装说明：LEAD FREE, 2-10S2C, TO-220SM, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.16
其他特性：HIGH SPEED外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：370 ns
标称接通时间 (ton)：220 nsBase Number Matches：1

GT15J331(2-10S2C) 数据手册

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GT15J331  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT15J331  
High-Power Switching Applications  
Unit: mm  
Motor Control Applications  
•
•
•
•
•
Fourth-generation IGBT  
Enhancement mode type  
High speed: t = 0.10 μs (typ.)  
f
Low saturation voltage: V  
= 1.75 V (typ.)  
CE (sat)  
FRD included between emitter and collector  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
15  
V
V
CES  
GES  
DC  
1 ms  
DC  
I
C
Collector current  
A
I
30  
CP  
JEDEC  
―
―
I
15  
A
A
F
Emitter-collector forward  
current  
JEITA  
1 ms  
I
30  
FM  
TOSHIBA  
2-10S1C  
Collector power dissipation  
(Tc = 25°C)  
P
70  
W
C
Weight: 1.5 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Equivalent Circuit  
Marking  
Collector  
JEDEC  
―
―
JEITA  
15J331  
Part No. (or abbreviation code)  
Lot No.  
Gate  
TOSHIBA  
2-10S2C  
Emitter  
Weight: 1.4 g (typ.)  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2010-01-07  
1234567

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