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GS88037BT-300 PDF预览

GS88037BT-300

更新时间： 2024-09-20 04:56:27
品牌 Logo 应用领域
GSI 存储内存集成电路静态存储器
页数 文件大小 规格书
19页 512K
描述
256K x 36 9Mb Sync Burst SRAM

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中文翻译

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GS88037BT-300 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP,
针数：100Reach Compliance Code：unknown
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.82Is Samacsys：N
最长访问时间：2.2 ns其他特性：PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：R-PQFP-G100长度：20 mm
内存密度：9437184 bit内存集成电路类型：CACHE SRAM
内存宽度：36湿度敏感等级：3
功能数量：1端子数量：100
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX36
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.6 mm
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

GS88037BT-300 数据手册

 浏览型号GS88037BT-300的Datasheet PDF文件第2页浏览型号GS88037BT-300的Datasheet PDF文件第3页浏览型号GS88037BT-300的Datasheet PDF文件第4页浏览型号GS88037BT-300的Datasheet PDF文件第5页浏览型号GS88037BT-300的Datasheet PDF文件第6页浏览型号GS88037BT-300的Datasheet PDF文件第7页 
GS88037BT-333/300/250/200  
333 MHz–200 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
256K x 36  
9Mb Sync Burst SRAM  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• Single Cycle Deselect (SCD) operation  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
SCD Pipelined Reads  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
The GS88037BT is a SCD (Single Cycle Deselect) pipelined  
synchronous SRAM. DCD (Dual Cycle Deselect) versions are  
also available. SCD SRAMs pipeline deselect commands one  
stage less than read commands. SCD RAMs begin turning off  
their outputs immediately after the deselect command has been  
captured in the input registers.  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
• Pb-Free 100-lead TQFP package available  
Functional Description  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Applications  
The GS88037BT is a 9,437,184-bit (8,388,608-bit for x32  
version) high performance synchronous SRAM with a  
2-bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Sleep Mode  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Controls  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Core and Interface Voltages  
The GS88037BT operates on a 2.5 V or 3.3 V power supply.  
All input are 3.3 V and 2.5 V compatible. Separate output  
power (V  
) pins are used to decouple output noise from the  
DDQ  
internal circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-333  
-300  
-250  
-200  
Unit  
Pipeline  
3-1-1-1  
t
2.0  
3.0  
2.2  
3.3  
2.3  
4.0  
2.7  
5.0  
ns  
ns  
KQ  
tCycle  
3.3 V  
2.5 V  
Curr (x36)  
Curr (x36)  
435  
435  
395  
395  
330  
330  
270  
270  
mA  
mA  
Rev: 1.04 2/2005  
1/19  
© 2002, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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中文翻译

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与GS88037BT-300相关器件

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GS88037BT-300I GSI

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 		256K x 36 9Mb Sync Burst SRAM
GS88037BT-300IT GSI

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 		Cache SRAM, 256KX36, 2.2ns, CMOS, PQFP100, TQFP-100
GS88037BT-300T GSI

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 		Cache SRAM, 256KX36, 2.2ns, CMOS, PQFP100, TQFP-100
GS88037BT-333 GSI

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 		256K x 36 9Mb Sync Burst SRAM
GS88037BT-333I GSI

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 		256K x 36 9Mb Sync Burst SRAM
GS88037BT-333IT GSI

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 		暂无描述
GS88037BT-333T GSI

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 		Cache SRAM, 256KX36, 2ns, CMOS, PQFP100, TQFP-100
GS88037BT-V GSI

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 		256K x 36 9Mb Sync Burst SRAM
GS88037CGT-200 GSI

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 		100 TQFP
GS88037CGT-200I GSI

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