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GN1A4Z PDF预览

GN1A4Z

更新时间: 2024-10-28 22:29:31
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管
页数 文件大小 规格书
4页 176K
描述
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR

GN1A4Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.92
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):6000 ns
最大开启时间(吨):200 nsBase Number Matches:1

GN1A4Z 数据手册

 浏览型号GN1A4Z的Datasheet PDF文件第2页浏览型号GN1A4Z的Datasheet PDF文件第3页浏览型号GN1A4Z的Datasheet PDF文件第4页 

与GN1A4Z相关器件

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323
GN1A4ZM67-T1 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
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GN1A4ZM67-T2
GN1A4ZM67-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM67-T2-A RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323
GN1A4ZM68-T1 RENESAS

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暂无描述
GN1A4ZM68-T1 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM68-T2-A RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4ZM69 NEC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323