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GN1F4M-T1 PDF预览

GN1F4M-T1

更新时间: 2024-11-27 08:48:07
品牌 Logo 应用领域
日电电子 - NEC 开关光电二极管晶体管
页数 文件大小 规格书
34页 1029K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD, SC-70, 3 PIN

GN1F4M-T1 技术参数

生命周期:Obsolete包装说明:SUPER MINIMOLD, SC-70, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

GN1F4M-T1 数据手册

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与GN1F4M-T1相关器件

型号 品牌 获取价格 描述 数据表
GN1F4M-T1-A RENESAS

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GN1F4M-T1-A
GN1F4M-T2 NEC

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100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD, SC-70, 3 PIN
GN1F4N NEC

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MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1F4N-A NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4N-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4Z NEC

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MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1F4ZM64-T1 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4ZM64-T1-A RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70
GN1F4ZM64-T1-AT RENESAS

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70
GN1F4ZM65-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M