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GN1A4ZM67-T1 PDF预览

GN1A4ZM67-T1

更新时间: 2024-10-29 20:56:43
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
4页 173K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD PACKAGE-3

GN1A4ZM67-T1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):135JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):6000 ns最大开启时间(吨):200 ns
Base Number Matches:1

GN1A4ZM67-T1 数据手册

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暂无描述
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323