5秒后页面跳转
GN1D PDF预览

GN1D

更新时间: 2024-11-25 22:32:51
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 20K
描述
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

GN1D 数据手册

 浏览型号GN1D的Datasheet PDF文件第2页 
GLASS PASSIVATED JUNCTION  
SILICON SURFACE MOUNT  
GN1A - GN13  
PRV : 50 - 1000 Volts  
Io : 1.0 Ampere  
SMA (DO-214AC)  
1.1 ± 0.3  
FEATURES :  
* Glass passivated chip  
* High current capability  
* High reliability  
0.2 ± 0.07  
1.2 ± 0.2  
* Low reverse current  
* Low forward voltage drop  
2.1 ± 0.2  
2.6 ± 0.15  
2.0 ± 0.2  
MECHANICAL DATA :  
* Case : SMA Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in millimeter  
* Weight : 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 1300 Volts  
700 910 Volts  
Maximum DC Blocking Voltage  
100  
1000 1300 Volts  
Amp.  
Maximum Average Forward Current Ta = 75 °C IF(AV)  
Peak Forward Surge Current  
1.0  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
30  
1.0  
5.0  
50  
8
Amps.  
Volts  
mA  
Maximum Forward Voltage at IF = 1.0 Amp.  
Maximum DC Reverse Current Ta = 25 °C  
IR  
at rated DC Blocking Voltage  
Ta = 100 °C  
IR(H)  
CJ  
mA  
Typical Junction Capacitance (Note1)  
Junction Temperature Range  
Storage Temperature Range  
pF  
TJ  
- 65 to + 150  
- 65 to + 150  
°C  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
UPDATE : MAY 27, 1998  

与GN1D相关器件

型号 品牌 获取价格 描述 数据表
GN1F4M NEC

获取价格

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1F4M-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4M-T1-A RENESAS

获取价格

GN1F4M-T1-A
GN1F4M-T2 NEC

获取价格

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD, SC-70, 3 PIN
GN1F4N NEC

获取价格

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1F4N-A NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4N-T2 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4Z NEC

获取价格

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1F4ZM64-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1F4ZM64-T1-A RENESAS

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70