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GN1B PDF预览

GN1B

更新时间: 2024-10-28 22:32:51
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管
页数 文件大小 规格书
2页 203K
描述
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER

GN1B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
风险等级:5.74配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:40 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:100 V最大反向恢复时间:1 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

GN1B 数据手册

 浏览型号GN1B的Datasheet PDF文件第2页 
GN1A THRU GN1M, GN13  
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER  
Reverse Voltage -  
50 to 1300 Volts  
Forward Current -  
1.0 Ampere  
Features  
For surface mounted applications  
Low profile package  
Built-in strain relief  
Easy pick and place  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Glass passivated chip junction  
High temperature soldering:  
260 /10 seconds at terminals  
D
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Mechanical Data  
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Case: SMA molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750,  
method 2026  
Polarity: Indicated by cathode band  
Weight: 0.004 ounce, 0.118 gram  
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Maximum Ratings and Electrical Characteristics  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbols  
GN1A  
GN1B  
GN1D  
GN1G  
GN1J  
GN1K  
GN1M  
GN13  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1300  
910  
Volts  
Volts  
Volts  
Amp  
Maximum DC blocking voltage  
100  
1000  
1300  
Maximum average forward rectified current at TL=100  
I(AV)  
1.0  
Peak forward surge current  
8.3mS single half sine-wave superimposed  
on rated load (MIL-STD-750D 4066 method)  
IFSM  
30.0  
Amps  
Maximum instantaneous forward voltage at 1.0A  
VF  
IR  
1.10  
5.0  
Volts  
A
Maximum DC reverse current  
at rated DC blocking voltage  
T =25  
TAA=125  
200.0  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Maximum thermal resistance (Note 3)  
Trr  
CJ  
2.0  
S
F
15.0  
30.0  
R
/W  
JL  
Operating and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(2) Measured at 1.0MHz and applied VR=4.0 volts  
(3) 8.0mm2 (0.013mm thick) land areas  
1

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