GN1B

更新时间： 2024-10-29 07:01:55

品牌	Logo	应用领域
SYNSEMI		二极管
页数	文件大小	规格书
2页	25K
描述
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

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中文翻译

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技术参数
数据手册

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GN1B 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

GN1B 数据手册

GLASS PASSIVATED JUNCTION

SILICON SURFACE MOUNT

SMA (DO-214AC)

GN1A - GN13

PRV : 50 - 1300 Volts

Io : 1.0 Ampere

1.1 ± 0.3

FEATURES :

* Glass passivated chip

* High current capability

* High reliability

* Low reverse current

* Low forward voltage drop

0.2 ± 0.07

1.2 ± 0.2

2.1 ± 0.2

2.6 ± 0.15

2.0 ± 0.2

MECHANICAL DATA :

* Case : SMA Molded plastic

Dimensions in millimeter

* Epoxy : UL94V-O rate flame retardant

* Lead : Lead Formed for Surface Mount

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.067 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 1300

700 910

1000 1300

Maximum DC Blocking Voltage

100

IF(AV)

1.0

Maximum Average Forward Current Ta = 75 °C

Peak Forward Surge Current

IFSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.0 Amp.

1.0

5.0

Maximum DC Reverse Current Ta = 25 °C

°C

IR(H)

at rated DC Blocking Voltage

Ta = 100 °C

Typical Junction Capacitance (Note1)

Junction Temperature Range

Storage Temperature Range

- 65 to + 150

TSTG

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V_DC

Page 1 of 2

Rev. 01 : January 10, 2004

中文翻译

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