是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.1 A | 最小直流电流增益 (hFE): | 300 |
元件数量: | 1 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.15 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GN1A4ZM69-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1A4ZM69-T2-AT | RENESAS |
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 | |
GN1A4Z-T1 | RENESAS |
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GN1A4Z-T1 | |
GN1A4Z-T1-A | RENESAS |
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GN1A4Z-T1-A | |
GN1A4Z-T2-A | RENESAS |
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GN1A4Z-T2-A | |
GN1A4Z-T2M67 | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1B | GOOD-ARK |
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SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER | |
GN1B | EIC |
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GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT | |
GN1B | SYNSEMI |
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GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT | |
GN1D | SYNSEMI |
获取价格 |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |