GN1B

更新时间： 2024-10-28 22:32:51

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	20K
描述
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

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中文翻译

获取价格

技术参数
数据手册

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GN1B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
最大非重复峰值正向电流：	30 A	元件数量：	1
最大输出电流：	1 A	最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes	表面贴装：	YES
Base Number Matches：	1

GN1B 数据手册

GLASS PASSIVATED JUNCTION

SILICON SURFACE MOUNT

GN1A - GN13

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

SMA (DO-214AC)

1.1 ± 0.3

FEATURES :

* Glass passivated chip

* High current capability

* High reliability

0.2 ± 0.07

1.2 ± 0.2

* Low reverse current

* Low forward voltage drop

2.1 ± 0.2

2.6 ± 0.15

2.0 ± 0.2

MECHANICAL DATA :

* Case : SMA Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Lead Formed for Surface Mount

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in millimeter

* Weight : 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 1300 Volts

700 910 Volts

Maximum DC Blocking Voltage

100

1000 1300 Volts

Amp.

Maximum Average Forward Current Ta = 75 °C IF(AV)

Peak Forward Surge Current

1.0

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

IFSM

1.0

5.0

Amps.

Volts

Maximum Forward Voltage at IF = 1.0 Amp.

Maximum DC Reverse Current Ta = 25 °C

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

Typical Junction Capacitance (Note1)

Junction Temperature Range

Storage Temperature Range

- 65 to + 150

°C

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

UPDATE : MAY 27, 1998

中文翻译

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