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GN1A4ZM69 PDF预览

GN1A4ZM69

更新时间: 2024-11-25 23:54:03
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
4页 176K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323

GN1A4ZM69 技术参数

生命周期:Obsolete包装说明:SUPER MINIMOLD, SC-70, 3 PIN
Reach Compliance Code:unknown风险等级:5.75
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

GN1A4ZM69 数据手册

 浏览型号GN1A4ZM69的Datasheet PDF文件第2页浏览型号GN1A4ZM69的Datasheet PDF文件第3页浏览型号GN1A4ZM69的Datasheet PDF文件第4页 

与GN1A4ZM69相关器件

型号 品牌 获取价格 描述 数据表
GN1A4ZM69-T1 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM69-T1-A RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4ZM69-T1-AT RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4ZM69-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM69-T2-AT RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4Z-T1 RENESAS

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GN1A4Z-T1
GN1A4Z-T1-A RENESAS

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GN1A4Z-T1-A
GN1A4Z-T2-A RENESAS

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GN1A4Z-T2-A
GN1A4Z-T2M67 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1B GOOD-ARK

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SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER