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GN1A4ZM67 PDF预览

GN1A4ZM67

更新时间: 2024-10-28 23:54:03
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 176K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323

GN1A4ZM67 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):135
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):6000 ns
最大开启时间(吨):200 nsBase Number Matches:1

GN1A4ZM67 数据手册

 浏览型号GN1A4ZM67的Datasheet PDF文件第2页浏览型号GN1A4ZM67的Datasheet PDF文件第3页浏览型号GN1A4ZM67的Datasheet PDF文件第4页 

与GN1A4ZM67相关器件

型号 品牌 获取价格 描述 数据表
GN1A4ZM67-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM67-T2 RENESAS

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GN1A4ZM67-T2
GN1A4ZM67-T2 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM67-T2-A RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4ZM68 NEC

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323
GN1A4ZM68-T1 RENESAS

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暂无描述
GN1A4ZM68-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4ZM68-T2-A RENESAS

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1A4ZM69 NEC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323
GN1A4ZM69-T1 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M