Datasheet > FZT2907

FZT2907

更新时间： 2024-09-12 22:32:15

品牌	Logo	应用领域
其他 - ETC		晶体开关晶体管光电二极管局域网
页数	文件大小	规格书
2页	41K
描述
SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR

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FZT2907 数据手册

SOT223 PNP SILICON PLANAR

SWITCHING TRANSISTOR

FZT2907

FZT2907A

ISSUE 4 JUNE 1996

✪

FEATURES

60 Volt V_CEO

Fast switching

PARTMARKING DETAIL

FZT2907 FZT2907

FZT2907A FZT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL FMMT2907 FMMT2907A

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-60

-5

-600

Continuous Collector Current

Power Dissipation at T_amb=25°C

°C

P_tot

1.5

Operating and Storage Temperature Range T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

FZT2907

FZT2907A UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CEX

-40

-60

-5

-60

-5

I_C=-10µA, I_E=0

Collector-Emitter

Breakdown Voltage

I_C=-10mA, I_B=0*

I_E=-10µA, I_C=0

Emitter-Base

Breakdown Voltage

Collector-Emitter

Cut-Off Current

-50

V_CE=-30V, V_BE=-0.5V

Collector Cut-Off

Current

I_CBO

-20

-10

µA

V_CB=-50V, I_E=0

V_CB=-50V, I_E=0, T_amb=150°C

Base Cut-Off Current I_B

-50

V_CE=-30V, V_BE=-0.5V

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

h_FE

-0.4

-1.6

-0.4

-1.6

I_C=-150mA, I_B=-15mA*

I_C=-500mA, I_B=-50mA*

Base-Emitter

Saturation Voltage

-1.3

-2.6

-1.3

-2.6

I_C=-150mA, I_B=-15mA*

I_C=-500mA, I_B=-50mA*

Static Forward

Current Transfer

Ratio

100

I_C=-0.1mA, V_CE=-10V

I_C=-1mA, V_CE=-10V

I_C=-10mA, V_CE=-10V

I_C=-150mA, V_CE=-10V*

I_C=-500mA, V_CE=-10V*

100

300

Transition

Frequency

f_T

200

MHz I_C=-50mA, V_CE=-20V

f=100MHz

*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%

3 - 298

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