Datasheet > FZT489

FZT489

更新时间： 2024-11-18 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管 PC
页数	文件大小	规格书
1页	84K
描述
Power Dissipation: PC=2W, Continuous Collector Current: IC=1A

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中文翻译

获取价格

数据手册

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FZT489 数据手册

SMD Type

TransistIoCrs

Product specification

FZT489

SOT-223

Unit: mm

■ Features

+0.2

3.50_-0.2

6.50_-0.2

● Power Dissipation: PC=2W

● Continuous Collector Current: IC=1A

+0.2

0.90_-0.2

+0.1

3.00_-0.1

+0.3

7.00_-0.3

1 Base

2 Collector

+0.1

3 Emitter

0.70_-0.1

2.9

4.6

4 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Continuous Collector Current

power dissipation

℃

Junction temperature

Storage temperature

150

Tstg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Symbol

VCBO

VCEO

VEBO

ICBO

Test conditons

Min

Typ Max

Unit

IC=100μA

IC=10mA

IE=100μA

VCB = 30 V, IE = 0

VEB=4V,IC=0

100

Emitter Cut-Off Current

IEBO

IC = 1.0 mA; VCE = 2V

IC = 1A; VCE = 2V

IC = 2A; VCE = 2V

IC = 1A; IB = 100mA

IC = 2A; IB = 200mA

100

DC current gain

hFE

300

0.3

0.6

Collector to emitter saturation voltage

VCE(sat)

Output capacitance

Transition frequency

Cob

VCB = 10 V, IE = 0,f=1.0MHz

IC = 50 mA; VCE =10V; f = 100 MHz

150

MHz

■ Marking

Marking

489

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4008-318-123

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