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FZT491

更新时间: 2024-09-12 22:06:27
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 45K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FZT491 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:7.76外壳连接:COLLECTOR
最大集电极电流 (IC):1 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:0.5 VBase Number Matches:1

FZT491 数据手册

  
SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FZT491  
ISSUE 3 - OCTOBER 1995  
C
E
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT591  
FZT491  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
60  
V
Emitter-Base Voltage  
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Base Current  
IC  
1
A
IB  
200  
2
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
-55 to +150  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
60  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=60V  
V
V
Collector Cut-Off  
Current  
100  
nA  
Emitter Cut-Off Current  
IEBO  
100  
100  
nA  
nA  
VEB=4V  
Collector-Emitter Cut-Off ICES  
Current  
VCES=60V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.25  
0.5  
V
V
IC=500mA, IB =50mA*  
IC=1A, IB =100mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=1A, IB=100mA*  
Base-Emitter Turn-On  
Voltage  
1.0  
V
IC =1A, VCE =5V*  
Static Forward Current  
100  
100  
80  
IC=1mA, VCE =5V  
IC =500mA, VCE =5V*  
IC =1A, VCE =5V*  
IC = 2A, VCE =5V*  
300  
10  
30  
Transition Frequency  
Output Capacitance  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V,  
f =100MHz  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs.  
For typical characteristics graphs see FMMT491 datasheet  
3 - 189  

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