Datasheet > FZT549

FZT549

更新时间： 2024-10-31 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	325K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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FZT549 数据手册

SMD Type

Transistors

PNP Transistors

FZT549 (KZT549)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● Collector Current Capability IC=-1A

● Collector Emitter Voltage V^CEO=-30V

0.250

2.30 (typ)

Gauge Plane

1.Base

2.Collector

0.70±0.1

3.Emitter

4.60 (typ)

4.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

-35

Collector - Emitter Voltage

Emitter - Base Voltage

-30

-5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-1

-2

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-35

-30

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA， I

= -100μA， I

=0 ,Ta = 100℃

CB= -30 V , I

-0.1

-10

Collector-base cut-off current

Emitter cut-off current

CBO

EBO

EB= -4V , I

C=0

-0.1

-0.5

-0.75

-1.25

-1

=-1 A, I

=-2 A, I

=-1 A, I

B=-100mA (Note.1)

B=-200mA (Note.1)

B=-100mA (Note.1)

Collector-emitter saturation voltage

CE(sat)

Base - emitter saturation voltage

Base-Emitter Turn-On Voltage

BE(sat)

BE(on)

CE= -2V, I

^CE= -2V, I

= -1A (Note.1)

= -50mA

= -500mA

= -1 A

FE(1)

FE(2)

FE(3)

FE(4)

100

300

DC current gain

(Note.1)

= -2 A

Collector output capacitance

Transition frequency

Cob

^CB= -10V, f=10MHz

^CE= -5V, I = -100mA,f=100MHz

100

MHz

Note.1: Pulse width=300us. Duty cycle ≤ 2%

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