Datasheet > FZT493

FZT493

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
3页	120K
描述
Package / Case : SOT-223;Mounting Style : SMD/SMT;Power Rating : 2 W;Transistor Polarity : NPN;VCEO : 100 V;VCBO : 120 V;VEBO : 5 V;Max Collector Current : 1.0 A;DC Collector/Base Gain hfe Min : 20;DC Current Gain hFE Max : 300

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FZT493 数据手册

FZT493

100V NPN MEDIUM POWER TRANSISTOR

SOT-223

FEATURES

1. BVCEO > 100V

2. IC=1A High Continuous Current

3. Low saturation voltage

1˖Base 2˖Collector 3˖Emitter

Maximum ratings(Ta=25ć unless otherwise noted)

Parameter

Value

Symbol

VCBO

VCEO

VEBO

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

120

100

Collector Power Dissipation

Junction Temperature

150

Storage Temperature

-55~150

Tstg

Electrical Characteristics (Ta=25ć unless otherwise noted)

Parameter

Test Condition

IC=100uA IE=0

Symbol

VCBO

VCEO

VEBO

ICBO

Min

120

100

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

IC=1mA IB=0

IE=100uA IC=0

VCB=100V IE=0

VEB=4V IC=0

100

IEBO

Collector-Emitter Cutoff Current

VCE=100V IB=0

VCE=10V IC=1mA

VCE=10V IC=250mA

VCE=10V IC=500mA

VCE=10V IC=1A

IC=500mA IB=50mA

IC=1A IB=100mA

ICE0

100

300

DC Current Gain

HFE

0.3

0.6

Collector-Emitter Saturation Voltage VCE(sat)

Base-Emitter Saturation Voltage

transition frequency

VBE(sat)

1.15

VCE=10V IC=50mA

f=100MHz

150

MHz

2022-09/17

REV:O

12 3

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