Datasheet > FZT558

FZT558

更新时间： 2024-11-17 22:32:15

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管光电二极管高压局域网
页数	文件大小	规格书
2页	112K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

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FZT558 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH VOLTAGE TRANSISTOR

ISSUE 2 DECEMBER 1995

FZT558

FEATURES

400 Volt V_CEO

200mA continuous current

P_tot= 2 Watt

PARTMARKING DETAIL -

FZT558

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

VALUE

-400

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

Emitter-Base Voltage

V_EBO

Continuous Collector Current

Power Dissipation

I_C

-200

P_tot

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

T_j:T_stg

= 25°C).

-55 to +150

°C

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO-400

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=-100µA

Collector-Emitter

Breakdown Voltage

V_BR(CEO)

-400

-5

I_C=-10mA*

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=-100µA

Collector Cut-Off Current I_CBO

Collector Cut-Off Current I_CES

-100

V_CB=-320V

V_CE=-320V

V_EB=-4V

Emitter Cut-Off Current

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.2

-0.5

I_C=-20mA, I_B=-2mA*

I_C=-50mA, I_B=-6mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.9

I_C=-50mA, I_B=-5mA*

Base-Emitter

Turn On Voltage

-0.9

I_C=-50mA, V_CE=-10V*

Static Forward Current

Transfer Ratio

100

I_C=-1mA, V_CE=-10V

I_C=-50mA, V_CE=-10V*

I_C=-100mA, V_CE=-10V*

300

Transition

Frequency

f_T

MHz

I_C=-10mA, V_CE=-20V

f=20MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=-20V, f=1MHz

Switching times

t_on

t_off

1600

I_C=-50mA, V_C=-100V

I_B1=5mA, I_B2=-10mA

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 192

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