Datasheet > FZT558

FZT558

更新时间： 2024-09-12 22:32:15

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管光电二极管高压局域网
页数	文件大小	规格书
2页	112K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FZT558 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH VOLTAGE TRANSISTOR

ISSUE 2 DECEMBER 1995

FZT558

FEATURES

400 Volt V_CEO

200mA continuous current

P_tot= 2 Watt

PARTMARKING DETAIL -

FZT558

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

VALUE

-400

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

Emitter-Base Voltage

V_EBO

Continuous Collector Current

Power Dissipation

I_C

-200

P_tot

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

T_j:T_stg

= 25°C).

-55 to +150

°C

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO-400

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=-100µA

Collector-Emitter

Breakdown Voltage

V_BR(CEO)

-400

-5

I_C=-10mA*

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=-100µA

Collector Cut-Off Current I_CBO

Collector Cut-Off Current I_CES

-100

V_CB=-320V

V_CE=-320V

V_EB=-4V

Emitter Cut-Off Current

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.2

-0.5

I_C=-20mA, I_B=-2mA*

I_C=-50mA, I_B=-6mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.9

I_C=-50mA, I_B=-5mA*

Base-Emitter

Turn On Voltage

-0.9

I_C=-50mA, V_CE=-10V*

Static Forward Current

Transfer Ratio

100

I_C=-1mA, V_CE=-10V

I_C=-50mA, V_CE=-10V*

I_C=-100mA, V_CE=-10V*

300

Transition

Frequency

f_T

MHz

I_C=-10mA, V_CE=-20V

f=20MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=-20V, f=1MHz

Switching times

t_on

t_off

1600

I_C=-50mA, V_C=-100V

I_B1=5mA, I_B2=-10mA

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 192

中文翻译

下载PDF

与FZT558相关器件

型号	品牌	获取价格	描述	数据表
FZT558TA	DIODES	获取价格	Power Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
FZT558TC	DIODES	获取价格	0.2A, 400V, PNP, Si, POWER TRANSISTOR
FZT560	ZETEX	获取价格	PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FZT560	DIODES	获取价格	SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FZT560A	ETC	获取价格
FZT560AD84Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT560AL99Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT560AS62Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT560D84Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT560L99Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4