FZT489Q

更新时间： 2024-11-19 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
1页	46K
描述
NPN, 30V, 1A, SOT223

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数据手册

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FZT489Q 数据手册

SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

FZT489

ISSUE 3 - NOVEMBER 1995

✪

COMPLEMENTARY TYPE

PARTMARKING DETAIL

FZT589

FZT489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

I_CM

Base Current

I_B

200

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

T_j:T_stg

= 25°C).

-55 to +150

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

I_C=100µA

I_C=10mA*

I_E=100µA

V_CB=30V

Breakdown Voltages

V_(BR)CBO

V_CEO(sus)

V_(BR)EBO

I_CBO

Collector Cut-Off Current

Emitter Cut-Off Current

100

I_CES

V_CES=30V

V_EB=4V

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.3

0.6

I_C=1A, I_B=100mA*

I_C=2A, I_B=200mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

1.1

I_C=1A, I_B=100mA*

Base-Emitter

Turn On Voltage

1.0

I_C=1A, V_CE=2V*

Static Forward Current

Transfer Ratio

100

I_C=1mA, V_CE=2V*

I_C=1A, V_CE=2V*

I_C=2A, V_CE=2V*

I_C=4A, V_CE=2V*

300

Transition Frequency

f_T

150

MHz

I_C=50mA, V_CE=10V

f=100MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMT449 datasheet

3 - 188

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