5秒后页面跳转
FZT489 PDF预览

FZT489

更新时间: 2024-09-14 22:06:27
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 45K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FZT489 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.17
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:0.6 VBase Number Matches:1

FZT489 数据手册

  
SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FZT489  
ISSUE 3 - NOVEMBER 1995  
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT589  
FZT489  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
30  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
A
ICM  
4
A
Base Current  
IB  
200  
2
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=30V  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
50  
30  
5
V
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
ICES  
VCES=30V  
VEB=4V  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.6  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn On Voltage  
1.0  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
100  
100  
60  
IC=1mA, VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=4A, VCE=2V*  
300  
10  
20  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT449 datasheet  
3 - 188  

与FZT489相关器件

型号 品牌 获取价格 描述 数据表
FZT489Q DIODES

获取价格

NPN, 30V, 1A, SOT223
FZT489QTA DIODES

获取价格

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
FZT489TA DIODES

获取价格

Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT489TC ZETEX

获取价格

Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT491 TYSEMI

获取价格

Power Dissipation: PC=2W, Continuous Collector Current: IC=1A
FZT491 DIODES

获取价格

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FZT491 ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FZT491 KEXIN

获取价格

NPN Transistor
FZT491_12 DIODES

获取价格

60V NPN MEDIUM POWER TRANSISTOR IN SOT223
FZT491A DIODES

获取价格

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR