Datasheet > FZT489

FZT489

更新时间： 2024-11-19 18:09:59

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科信 - KEXIN		/
页数	文件大小	规格书
1页	331K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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FZT489 数据手册

SMD Type

Transistors

NPN Transistors

FZT489 (KZT489)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● Collector Current Capability IC=1A

● Collector Emitter Voltage V^CEO=30V

● Complementary to FZT589

0.250

2.30 (typ)

Gauge Plane

1.Base

2.Collector

0.70±0.1

3.Emitter

4.60 (typ)

4.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Base Current

200

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 10 mA， I

= 100μA， I

= 0

CBO

CES

EBO

CB= 30 V , I

CES= 30 V

100

0.3

0.6

1.1

EB= 4V , IC=0

=1 A, I

=2 A, I

=1 A, I

=100mA (Note.1)

=200mA (Note.1)

=100mA (Note.1)

Collector-emitter saturation voltage

CE(sat)

Base - emitter saturation voltage

Base-Emitter Turn On Voltage

BE(sat)

BE(on)

CE= 2V, I

^CE= 2V, I

= 1A (Note.1)

FE(1)

FE(2)

FE(3)

FE(4)

= 1mA

100

= 1A

300

DC current gain

(Note.1)

= 2A

= 4A

Collector output capacitance

Transition frequency

Cob

^CB= 10V, f=1MHz

^CE= 10V, I = 50mA,f=100MHz

150

MHz

Note.1: Pulse width=300us. Duty cycle ≤ 2%

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