FZT458Q

更新时间： 2024-11-19 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
1页	47K
描述
NPN, 400V, 0.3A, SOT223

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FZT458Q 数据手册

SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 JANUARY 1996

FZT458

FEATURES

400 Volt V_CEO

COMPLEMENTARY TYPE

PARTMARKING DETAIL

FZT558

FZT458

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

400

Collector-Emitter Voltage

400

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

300

I_CM

Base Current

I_B

200

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

T_j:T_stg

= 25°C).

-55 to +150

°C

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

I_C=100µA

I_C=10mA*

I_E=100µA

V_CB=320V

V_CE=320V

V_EB=4V

Breakdown Voltages

V_(BR)CBO

V_CEO(sus)

V_(BR)EBO

I_CBO

400

Collector Cut-Off Currents

100

I_CES

Emitter Cut-Off Current

I_EBO

Emitter Saturation Voltages

V_CE(sat)

0.2

0.5

I_C=20mA, I_B=2mA*

I_C=50mA, I_B=6mA*

V_BE(sat)

V_BE(on)

0.9

I_C=50mA, I_B=5mA*

I_C=50mA, V_CE=10V*

Base-Emitter

Turn On Voltage

Static Forward

Current Transfer Ratio

h_FE

100

I_C=1mA, V_CE=10V

I_C=50mA, V_CE=10V*

I_C=100mA, V_CE=10V*

300

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=20V, f=1MHz

Switching times

t_on

t_off

135 Typical

2260 Typical

I_C=50mA, V_CC=100V

I_B1=5mA, I_B2=-10mA

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FMMT458 datasheet

3 - 187

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