FZT3019
NPN General Purpose Amplifier
4
•
This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 500 mA and collector
voltages up to 80 V.
3
•
Sourced from process 12.
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
80
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
CEO
140
V
CBO
EBO
7.0
V
I
- Continuous
7.0
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ 150
J
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
= 30 mA, I = 0
80
40
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
C
C
E
B
= 100 µA, I = 0
E
= 100 µA, I = 0
7.0
C
I
V
V
= 90 V, I = 0
0.01
10
µA
µA
CB
CB
E
= 90 V, I = 0, T = 150°C
E
a
I
Emitter-Cutoff Current
0.01
µA
EBO
On Characteristics
h
DC Current Gain
I
I
I
I
I
= 0.1 mA, V = 10 V
50
90
100
50
FE
C
C
C
C
C
CE
= 10 mA, V = 10 V
CE
= 150 mA, V = 10 V
300
CE
= 500 mA, V = 10 V
CE
= 1.0 A, V = 10 V
15
CE
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
= 500 mA, I = 15 V
0.2
0.5
V
V
CE(sat)
BE(sat)
C
C
B
= 1.0 A, I = 50 V
B
I
= 10 mA, I = 15 V
1.1
V
C
B
Small Signal Characteristics
f
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Capacitance
I
= 50 mA, V = 10 V, f = 20 MHz
100
80
MHz
pF
T
C
CE
C
C
V
V
= 10 V, I = 0, f = 1.0 MHz
12
60
cob
ibo
fe
CB
BE
E
= 10 V, I = 0, f = 1.0 MHz
pF
E
h
Small Signal current Gain
I
= 50 mA, V = 10 V,
400
C
CE
f = 20 MHz
rb’Cc
NF
Collector Base Time Constant
Noise Figure
I
I
= 10 mA, V = 10 V, f = 4.0 MHz
400
4.0
pS
dB
C
CB
= 100 mA, V = 10 V,
C
CE
R
= 1.0kΩ, f = 1.0KHz
S
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004