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FZT3019 PDF预览

FZT3019

更新时间: 2024-11-03 22:32:15
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飞兆/仙童 - FAIRCHILD 放大器
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描述
NPN General Purpose Amplifier

FZT3019 数据手册

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FZT3019  
NPN General Purpose Amplifier  
4
This device is designed for general purpose medium power amplifiers  
and switches requiring collector currents to 500 mA and collector  
voltages up to 80 V.  
3
Sourced from process 12.  
2
1
SOT-223  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
80  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
140  
V
CBO  
EBO  
7.0  
V
I
- Continuous  
7.0  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
J
STG  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These rating are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Sustaining Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 30 mA, I = 0  
80  
40  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 100 µA, I = 0  
E
= 100 µA, I = 0  
7.0  
C
I
V
V
= 90 V, I = 0  
0.01  
10  
µA  
µA  
CB  
CB  
E
= 90 V, I = 0, T = 150°C  
E
a
I
Emitter-Cutoff Current  
0.01  
µA  
EBO  
On Characteristics  
h
DC Current Gain  
I
I
I
I
I
= 0.1 mA, V = 10 V  
50  
90  
100  
50  
FE  
C
C
C
C
C
CE  
= 10 mA, V = 10 V  
CE  
= 150 mA, V = 10 V  
300  
CE  
= 500 mA, V = 10 V  
CE  
= 1.0 A, V = 10 V  
15  
CE  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= 500 mA, I = 15 V  
0.2  
0.5  
V
V
CE(sat)  
BE(sat)  
C
C
B
= 1.0 A, I = 50 V  
B
I
= 10 mA, I = 15 V  
1.1  
V
C
B
Small Signal Characteristics  
f
Current Gain - Bandwidth Product  
Collector-Base Capacitance  
Input Capacitance  
I
= 50 mA, V = 10 V, f = 20 MHz  
100  
80  
MHz  
pF  
T
C
CE  
C
C
V
V
= 10 V, I = 0, f = 1.0 MHz  
12  
60  
cob  
ibo  
fe  
CB  
BE  
E
= 10 V, I = 0, f = 1.0 MHz  
pF  
E
h
Small Signal current Gain  
I
= 50 mA, V = 10 V,  
400  
C
CE  
f = 20 MHz  
rb’Cc  
NF  
Collector Base Time Constant  
Noise Figure  
I
I
= 10 mA, V = 10 V, f = 4.0 MHz  
400  
4.0  
pS  
dB  
C
CB  
= 100 mA, V = 10 V,  
C
CE  
R
= 1.0k, f = 1.0KHz  
S
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004