Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1600 R 17 KF6 B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
VCES
1700
V
collector-emitter voltage
TC = 80 °C
IC,nom.
IC
1600
3200
A
A
Kollektor-Dauergleichstrom
DC-collector current
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P = 1 ms, TC = 80°C
ICRM
3200
12,5
+/- 20V
1600
3200
980
A
kW
V
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
Dauergleichstrom
DC forward current
IF
A
Periodischer Spitzenstrom
repetitive peak forw. current
IFRM
tp = 1 ms
A
Grenzlastintegral der Diode
I2t - value, Diode
I2t
kA2s
kV
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
Isolations-Prüfspannung
insulation test voltage
VISOL
4
Charakteristische Werte / Characteristic values
min. typ. max.
Transistor / Transistor
IC = 1600A, VGE = 15V, Tvj = 25°C
VCE sat
2,6
3,1
3,1
3,6
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 1600A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
I
C = 130mA, VCE = VGE, Tvj = 25°C
VGE(th)
4,5
5,5
19
6,5
V
Gateladung
gate charge
V
GE = -15V ... +15V
QG
µC
nF
nF
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
105
5,3
Rückwirkungskapazität
reverse transfer capacitance
Cres
ICES
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
0,04
20
3
mA
mA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
160
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE = 0V, VGE = 20V, Tvj = 25°C
IGES
400
nA
prepared by: Oliver Schilling
date of publication: 4.9.1999
revision: 2 (Serie)
approved by: Chr. Lübke; 11.10.99
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FZ1600R17KF6B2