生命周期: | Transferred | 包装说明: | MODULE-7 |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 2300 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1140 ns | 标称接通时间 (ton): | 880 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1600R12KL4C | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2450A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FZ1600R12KL4CNOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2450A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FZ1600R17HP4 | INFINEON |
获取价格 |
IHM-B module with soft-switching Trench-IGBT4 | |
FZ1600R17HP4_B2 | INFINEON |
获取价格 |
IHM-B module with soft-switching Trench-IGBT4 | |
FZ1600R17HP4_B21 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FZ1600R17HP4B2BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 | |
FZ1600R17HP4B2BOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FZ1600R17KE3 | EUPEC |
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IGBT-inverter | |
FZ1600R17KE3 | INFINEON |
获取价格 |
IHM 1700 V 1600 A 130mm 单开关 IGBT 模块,采用TRENCHS | |
FZ1600R17KE3_B2 | EUPEC |
获取价格 |
IGBT-modules |