Datasheet > FSS13A0D

FSS13A0D

更新时间： 2024-11-22 22:32:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	74K
描述
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSS13A0D 数据手册

FSS13A0D, FSS13A0R

Data Sheet

June 2000

File Number 4487.3

2A, 100V, 0.170 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

Features

• 12A, 100V, r

= 0.170Ω

DS(ON)

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs

speciﬁcally designed for commercial and military space

applications. Enhanced Power MOSFET immunity to Single

Event Effects (SEE), Single Event Gate Rupture (SEGR) in

particular, is combined with 100K RADS of total dose

hardness to provide devices which are ideally suited to harsh

space environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Packaging

Formerly available as type TA17696.

TO-257AA

Ordering Information

RAD LEVEL

SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS13A0D1

FSS13A0D3

FSS13A0R1

FSS13A0R3

FSS13A0R4

10K

100K

Commercial

TXV

Space

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

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与FSS13A0D相关器件

型号	品牌	获取价格	描述	数据表
FSS13A0D1	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0D3	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0R	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0R1	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0R3	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0R4	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS14	ETC	获取价格	1 Amp. Surface Mounted Schottky Barrier Rectifier
FSS140	SANYO	获取价格	Load Switching Applications
FSS145	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
FSS15	ETC	获取价格	1 Amp. Surface Mounted Schottky Barrier Rectifier

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