Datasheet > FSS13A0R1

FSS13A0R1

更新时间： 2024-11-22 22:26:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	74K
描述
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSS13A0R1 数据手册

FSS13A0D, FSS13A0R

Data Sheet

June 2000

File Number 4487.3

2A, 100V, 0.170 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

Features

• 12A, 100V, r

= 0.170Ω

DS(ON)

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs

speciﬁcally designed for commercial and military space

applications. Enhanced Power MOSFET immunity to Single

Event Effects (SEE), Single Event Gate Rupture (SEGR) in

particular, is combined with 100K RADS of total dose

hardness to provide devices which are ideally suited to harsh

space environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Packaging

Formerly available as type TA17696.

TO-257AA

Ordering Information

RAD LEVEL

SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS13A0D1

FSS13A0D3

FSS13A0R1

FSS13A0R3

FSS13A0R4

10K

100K

Commercial

TXV

Space

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSS13A0R1相关器件

型号	品牌	获取价格	描述	数据表
FSS13A0R3	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS13A0R4	INTERSIL	获取价格	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS14	ETC	获取价格	1 Amp. Surface Mounted Schottky Barrier Rectifier
FSS140	SANYO	获取价格	Load Switching Applications
FSS145	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
FSS15	ETC	获取价格	1 Amp. Surface Mounted Schottky Barrier Rectifier
FSS1500NGR	HONEYWELL	获取价格	Low Profile Force Sensor
FSS1500NGT	HONEYWELL	获取价格	Low Profile Force Sensor
FSS1500NSB	SENSORTECHNICS	获取价格	Low profile force sensor
FSS1500NSB	HONEYWELL	获取价格	Analog Circuit,

与FSS13A0R1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS13A0R1

FSS13A0R1 数据手册

与FSS13A0R1相关器件

与FSS13A0R1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS13A0R1

FSS13A0R1 数据手册

与FSS13A0R1相关器件

与FSS13A0R1相关文章

您还可以找

您在本页遇到什么问题？