Datasheet > FSS201

FSS201

更新时间： 2024-11-22 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	110K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 7A I(D) \| SO

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSS201 数据手册

Ordering number:ENN5999A

N-Channel Silicon MOSFET

FSS201

DC/DC Converter Applications

Features

Package Dimensions

unit:mm

· Low ON-resistance.

· 2.5V drive.

2116

[FSS201]

1 : Source

2 : Source

3 : Source

4 : Gate

0.2

5.0

5 : Drain

6 : Drain

7 : Drain

8 : Drain

1.27

0.595

0.43

Specifications

SANYO : SOP8

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±10

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm²×0.8mm)

Tch

1.8

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=20V, V =0

DSS

=±8V, V =0

±10

1.3

GSS

=10V, I =1mA

0.4

GS(off)

| yfs |

Forward Transfer Admittance

=10V, I =7A

=7A, V =4V

=2A, V =2.5V

mΩ

DS(on)

Static Drain-to-Source On-State Resistance

DS(on)

Ciss

Input Capacitance

=10V, f=1MHz

750

520

300

Output Capacitance

Reverse Transfer Capacitance

Marking : S201

Coss

Crss

=10V, f=1MHz

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71000TS (KOTO) TA-2923 No.5999-1/4

12 3 4

中文翻译

下载PDF

与FSS201相关器件

型号	品牌	获取价格	描述	数据表
FSS202	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 7A I(D) \| SO
FSS203	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 8A I(D) \| SO
FSS204	ETC	获取价格
FSS206	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 9A I(D) \| SO
FSS207	SANYO	获取价格	Ultrahigh-Speed Switching Applications
FSS208	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 10A I(D) \| SO
FSS-20-D-C-02-B	SAMTEC	获取价格	Interconnection Device
FSS-20-D-C-XX-ST2	SAMTEC	获取价格	Interconnection Device
FSS-20-D-C-XX-ST3	SAMTEC	获取价格	Interconnection Device
FSS-20-D-C-XX-ST4	SAMTEC	获取价格	Interconnection Device

与FSS201相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

55
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS201

FSS201 数据手册

与FSS201相关器件

与FSS201相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS201

FSS201 数据手册

与FSS201相关器件

与FSS201相关文章

您还可以找

您在本页遇到什么问题？