5秒后页面跳转
FSS207 PDF预览

FSS207

更新时间: 2024-11-22 22:48:55
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 44K
描述
Ultrahigh-Speed Switching Applications

FSS207 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FSS207 数据手册

 浏览型号FSS207的Datasheet PDF文件第2页浏览型号FSS207的Datasheet PDF文件第3页浏览型号FSS207的Datasheet PDF文件第4页 
Ordering number:ENN6346  
N-Channel Silicon MOSFET  
FSS207  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· 2.5V drive.  
2116  
[FSS207]  
8
5
1 : Source  
2 : Source  
3 : Source  
4 : Gate  
1
4
0.2  
5.0  
5 : Drain  
6 : Drain  
7 : Drain  
8 : Drain  
1.27  
0.595  
0.43  
SANYO : SOP8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
20  
±10  
10  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
Mounted on a ceramic board (1000mm2×0.8mm)  
52  
A
DP  
P
D
Tch  
2
W
˚C  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
20  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
I
=20V, V =0  
10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±8V, V =0  
DS  
=10V, I =1mA  
D
=10V, I =10A  
D
±10  
1.3  
GSS  
V
0.4  
23  
GS(off)  
| yfs |  
Forward Transfer Admittance  
32  
S
R
1
=10A, V =4V  
GS  
10  
15  
13  
21  
mΩ  
mΩ  
pF  
pF  
pF  
DS(on)  
D
Static Drain-to-Source On-State Resistance  
R
2
I
=2A, V =2.5V  
D GS  
DS(on)  
Ciss  
Input Capacitance  
V
V
V
=10V, f=1MHz  
1700  
1200  
680  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : S207  
Coss  
Crss  
=10V, f=1MHz  
DS  
=10V, f=1MHz  
DS  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31000TS (KOTO) TA-1507 No.6346-1/4  

与FSS207相关器件

型号 品牌 获取价格 描述 数据表
FSS208 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
FSS-20-D-C-02-B SAMTEC

获取价格

Interconnection Device
FSS-20-D-C-XX-ST2 SAMTEC

获取价格

Interconnection Device
FSS-20-D-C-XX-ST3 SAMTEC

获取价格

Interconnection Device
FSS-20-D-C-XX-ST4 SAMTEC

获取价格

Interconnection Device
FSS-20-D-G-02-B SAMTEC

获取价格

Interconnection Device
FSS-20-D-G-02-B10 SAMTEC

获取价格

Interconnection Device
FSS-20-D-G-02-B20 SAMTEC

获取价格

Interconnection Device
FSS-20-D-G-02-B30 SAMTEC

获取价格

Interconnection Device
FSS-20-D-G-02-ST4 SAMTEC

获取价格

Interconnection Device