Datasheet > FSS162

FSS162

更新时间： 2024-11-23 03:37:59

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
4页	39K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSS162 数据手册

Ordering number : ENA0348

FSS162

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

FSS162

Features

• Low ON-resistance.

•

4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--30

±20

-- 8

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10s)

Drain Current (PW≤10µs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Duty cycle≤1%

--10

--52

2.4

150

Mounted on a ceramic board (1200mm²✕0.8mm), PW≤10s

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--30

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0V

µA

(BR)DSS

D GS

=--30V, V =0V

--1

±10

--2.4

DSS

= ±16V, V =0V

GSS

V (off)

=--10V, I =--1mA

--1.0

Forward Transfer Admittance

yfs

=--10V, I =--8A

(on)1

(on)2

(on)3

=--8A, V =--10V

mΩ

Static Drain-to-Source On-State Resistance

=--4A, V =--4.5V

=--4A, V =--4V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Marking : S162

Ciss

=--10V, f=1MHz

2500

460

370

Coss

Crss

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71206 / 40506PA MS IM TB-00002255 No. A0348-1/4

12 3 4

中文翻译

下载PDF

与FSS162相关器件

型号	品牌	获取价格	描述	数据表
FSS173	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
FSS174	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
FSS179	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
FSS201	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 7A I(D) \| SO
FSS202	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 7A I(D) \| SO
FSS203	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 8A I(D) \| SO
FSS204	ETC	获取价格
FSS206	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 9A I(D) \| SO
FSS207	SANYO	获取价格	Ultrahigh-Speed Switching Applications
FSS208	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 10A I(D) \| SO

与FSS162相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

55
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS162

FSS162 数据手册

与FSS162相关器件

与FSS162相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS162

FSS162 数据手册

与FSS162相关器件

与FSS162相关文章

您还可以找

您在本页遇到什么问题？