FSS179
Ordering number : ENA1294
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
FSS179
Features
•
Low-ON-reisistance.
•
4V drive.
•
Halogen free compliance.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--30
±20
-- 7
DSS
V
V
GSS
I
A
D
Drain Current (PW 10s)
I
D
Duty cycle 1%
--9
A
≤
≤
Drain Current (PW 10 s)
I
Duty cycle 1%
When mounted on ceramic substrate (2000mm2 0.8mm), PW 10s
--52
2.2
150
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
W
°C
°C
×
≤
D
Tch
Storage Temperature
Tstg
--55 to +150
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
-- 1
±10
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
5.4
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =-- 7A
9
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I
I
I
=-- 7A, V =-- 10V
GS
21
28
45
51
mΩ
mΩ
mΩ
D
D
D
Static Drain-to-Source On-State Resistance
=-- 3.5A, V =-- 4.5V
GS
32
36
=-- 3.5A, V =-- 4V
GS
Marking : S179
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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90308PA TI IM TC-00001505