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FSS13A0R4 PDF预览

FSS13A0R4

更新时间: 2024-11-22 22:32:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 74K
描述
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

FSS13A0R4 数据手册

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FSS13A0D, FSS13A0R  
TM  
Data Sheet  
June 2000  
File Number 4487.3  
2A, 100V, 0.170 Ohm, Rad Hard, SEGR  
Resistant, N-Channel Power MOSFETs  
Features  
• 12A, 100V, r  
= 0.170  
DS(ON)  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs  
specifically designed for commercial and military space  
applications. Enhanced Power MOSFET immunity to Single  
Event Effects (SEE), Single Event Gate Rupture (SEGR) in  
particular, is combined with 100K RADS of total dose  
hardness to provide devices which are ideally suited to harsh  
space environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
- 1.5nA Per-RAD(Si)/s Typically  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E13 Neutrons/cm  
2
2
- Usable to 3E14 Neutrons/cm  
Symbol  
D
G
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
S
Packaging  
Formerly available as type TA17696.  
TO-257AA  
Ordering Information  
S
D
G
RAD LEVEL  
SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSS13A0D1  
FSS13A0D3  
FSS13A0R1  
FSS13A0R3  
FSS13A0R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
Space  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
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